Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14400025Application Date: 2013-03-12
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Publication No.: US09525057B2Publication Date: 2016-12-20
- Inventor: Naruhisa Miura , Shiro Hino , Akihiko Furukawa , Yuji Abe , Shuhei Nakata , Masayuki Imaizumi , Yasuhiro Kagawa
- Applicant: Naruhisa Miura , Shiro Hino , Akihiko Furukawa , Yuji Abe , Shuhei Nakata , Masayuki Imaizumi , Yasuhiro Kagawa
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-111266 20120515; JP2012-243304 20121105
- International Application: PCT/JP2013/056785 WO 20130312
- International Announcement: WO2013/172079 WO 20131121
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L21/04 ; H01L29/10 ; H01L29/423 ; H01L29/06 ; H01L29/66 ; H01L29/808 ; H01L29/16
Abstract:
A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region.
Public/Granted literature
- US20150108564A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2015-04-23
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