公开(公告)号：US20130126906A1

公开(公告)日：2013-05-23

申请号：US13696943

申请日：2011-03-18

申请人： Nobuyuki Tomita ,  Kenichi Hamano ,  Masayoshi Tarutani ,  Yoichiro Mitani ,  Takeharu Kuroiwa ,  Masayuki Imaizumi ,  Hiroaki Sumitani ,  Kenichi Ohtsuka ,  Tomoaki Furusho ,  Takao Sawada ,  Yuji Abe

发明人： Nobuyuki Tomita ,  Kenichi Hamano ,  Masayoshi Tarutani ,  Yoichiro Mitani ,  Takeharu Kuroiwa ,  Masayuki Imaizumi ,  Hiroaki Sumitani ,  Kenichi Ohtsuka ,  Tomoaki Furusho ,  Takao Sawada ,  Yuji Abe

IPC分类号： H01L21/02 ,  H01L29/16

CPC分类号： H01L21/02529 ,  C30B25/02 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/6719 ,  H01L21/68771 ,  H01L29/1608

摘要： A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

摘要翻译： 提供了一种方法来制造其表面平坦度非常好并且具有非常低的胡萝卜缺陷密度和外延生长后产生的三角形缺陷的碳化硅外延晶片。 碳化硅外延晶片是通过第一步骤，在还原气体气氛中，在第一温度T1处理处理时间t，退火碳化硅本体衬底，其从<0001>面倾斜小于5度;第二步骤 在第一步骤中，在低于退火温度T1的第二温度T2下进行外延生长的第三步骤，同时至少提供包含硅原子的气体和包括碳的气体 原子

公开(公告)号：US08245541B2

公开(公告)日：2012-08-21

申请号：US12578058

申请日：2009-10-13

申请人： Toshimi Habasaki ,  Mitsuru Takagi ,  Yuji Abe ,  Hisashi Kasai

发明人： Toshimi Habasaki ,  Mitsuru Takagi ,  Yuji Abe ,  Hisashi Kasai

IPC分类号： C03B37/03

CPC分类号： C03B37/02745 ,  C03B37/032

摘要： Simple and small-sized equipment which continuously afford alternate twists to an optical fiber and a method using the apparatus are provided. The equipment includes: a guide roller for causing the fiber to roll; a roller supporting member for holding the roller in a manner allowing the roller to freely turn about an axial center X; and a driving unit to cause the roller to oscillate by making the supporting member to turn about an axial center Y that is inclined relative to the axial center X. The method includes: arranging a guide roller to intersect the fiber, the roller being held by a roller supporting member to freely turn about an axial center X; oscillating the roller by driving the supporting member to revolve about the axial center Y which is inclined relative to the axis center X; and causing the fiber to roll to afford alternate twists to the fiber.

摘要翻译： 提供了连续提供光纤交替扭曲的简单和小型设备以及使用该设备的方法。 该设备包括：用于使纤维滚动的导辊; 用于以允许辊绕轴心X自由转动的方式保持辊的辊支撑构件; 以及驱动单元，通过使支撑构件绕相对于轴心X倾斜的轴心Y转动而使辊振动。该方法包括：布置导辊与纤维相交，辊被保持在 滚子支撑构件，用于绕轴心X自由转动; 通过驱动支撑构件绕相对于轴心X倾斜的轴向中心Y旋转来摆动辊; 并使纤维滚动以给纤维提供交替的扭曲。

公开(公告)号：US08163576B2

公开(公告)日：2012-04-24

申请号：US12641421

申请日：2009-12-18

申请人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Kazushige Kawasaki ,  Hitoshi Sakuma ,  Yuji Abe

发明人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Kazushige Kawasaki ,  Hitoshi Sakuma ,  Yuji Abe

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.

摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括形成半导体元件的n型Ga-N衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（2）由不同于氮化物半导体并且包含硅的材料构成。

公开(公告)号：US20110316047A1

公开(公告)日：2011-12-29

申请号：US13220024

申请日：2011-08-29

申请人： Takuma Nanjo ,  Muneyoshi Suita ,  Yuji Abe ,  Toshiyuki Oishi ,  Yasunori Tokuda

发明人： Takuma Nanjo ,  Muneyoshi Suita ,  Yuji Abe ,  Toshiyuki Oishi ,  Yasunori Tokuda

IPC分类号： H01L29/737

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/802

摘要： The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0

摘要翻译： 本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件，其具有Al x Ga 1-x N沟道层，Al x Ga 1-x N沟道层的组成比为Al（x（0

公开(公告)号：US08035130B2

公开(公告)日：2011-10-11

申请号：US12054714

申请日：2008-03-25

申请人： Takuma Nanjo ,  Muneyoshi Suita ,  Yuji Abe ,  Toshiyuki Oishi ,  Yasunori Tokuda

发明人： Takuma Nanjo ,  Muneyoshi Suita ,  Yuji Abe ,  Toshiyuki Oishi ,  Yasunori Tokuda

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/802

摘要： The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0

摘要翻译： 本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件，其具有Al x Ga 1-x N沟道层，Al x Ga 1-x N沟道层的组成比为Al（x（0

公开(公告)号：US20100095708A1

公开(公告)日：2010-04-22

申请号：US12578058

申请日：2009-10-13

申请人： Toshimi HABASAKI ,  Mitsuru Takagi ,  Yuji Abe ,  Hisashi Kasai

发明人： Toshimi HABASAKI ,  Mitsuru Takagi ,  Yuji Abe ,  Hisashi Kasai

IPC分类号： C03B37/01 ,  C03B37/03

CPC分类号： C03B37/02745 ,  C03B37/032

摘要： Simple and small-sized equipment which continuously afford alternate twists to an optical fiber and a method using the apparatus are provided. The equipment includes: a guide roller for causing the fiber to roll; a roller supporting member for holding the roller in a manner allowing the roller to freely turn about an axial center X; and a driving unit to cause the roller to oscillate by making the supporting member to turn about an axial center Y that is inclined relative to the axial center X. The method includes: arranging a guide roller to intersect the fiber, the roller being held by a roller supporting member to freely turn about an axial center X; oscillating the roller by driving the supporting member to revolve about the axial center Y which is inclined relative to the axis center X; and causing the fiber to roll to afford alternate twists to the fiber.

摘要翻译： 提供了连续提供光纤交替扭曲的简单和小型设备以及使用该设备的方法。 该设备包括：用于使纤维滚动的导辊; 用于以允许辊绕轴心X自由转动的方式保持辊的辊支撑构件; 以及驱动单元，通过使支撑构件绕相对于轴心X倾斜的轴心Y转动而使辊振动。该方法包括：布置导辊与纤维相交，辊被保持在 滚子支撑构件，用于绕轴心X自由转动; 通过驱动支撑构件绕相对于轴心X倾斜的轴向中心Y旋转来摆动辊; 并使纤维滚动以给纤维提供交替的扭曲。

公开(公告)号：US07378351B2

公开(公告)日：2008-05-27

申请号：US11143685

申请日：2005-06-03

申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Zempei Kawazu ,  Yuji Abe

发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Zempei Kawazu ,  Yuji Abe

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28575 ,  H01L21/30621 ,  H01L33/0075 ,  H01S5/32341

摘要： A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.

摘要翻译： 氮化物半导体器件通过在GaN衬底主表面上形成氮化物半导体层形成步骤，抛光由上述氮化物半导体层形成的GaN衬底的背面的步骤，干法蚀刻 通过使用氯和氧的气体混合物进行上述抛光的GaN衬底的背面，以及在经受上述干蚀刻的GaN衬底的背面上形成n型电极的步骤。

公开(公告)号：US20070116468A1

公开(公告)日：2007-05-24

申请号：US11550481

申请日：2006-10-18

申请人： Philip Nan JI ,  Ting WANG ,  Arthur DOGARIU ,  Lei ZHONG ,  Osamu MATSUDA ,  Yuji ABE

发明人： Philip Nan JI ,  Ting WANG ,  Arthur DOGARIU ,  Lei ZHONG ,  Osamu MATSUDA ,  Yuji ABE

IPC分类号： H04J14/02

CPC分类号： H04J14/0227 ,  H04J14/02 ,  H04J14/0208 ,  H04J14/0209 ,  H04J14/0212 ,  H04J14/0213

摘要： A tunable asymmetric interleaver constructed from two symmetric interleavers in series, wherein either or both of the individual symmetric interleavers exhibit a wavelength shifting ability. Advantageously, tunable asymmetric interleavers so constructed provide continuous tunable interleaving ratios from 0:100 to 50:50 to 100:0 and provide attractive upgrade paths for existing and future DWDM networks and applications.

摘要翻译： 由两个对称交织器串联构成的可调谐非对称交织器，其中单个对称交织器中的一个或两个呈现波长移位能力。 有利地，如此构造的可调谐非对称交织器提供从0：100到50:50到100：0的连续可调交织比，并为现有和未来的DWDM网络和应用提供有吸引力的升级路径。

公开(公告)号：US20060108596A1

公开(公告)日：2006-05-25

申请号：US11274422

申请日：2005-11-16

申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Yuji Abe

发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Yuji Abe

IPC分类号： H01L33/00

CPC分类号： H01L21/28575 ,  H01L33/32 ,  H01L33/40

摘要： A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.

摘要翻译： P型电极材料设置在P型接触层的顶表面上。 P型电极材料由AuGa膜，Au膜，Pt膜和Au膜形成。 AuGa膜设置在P型接触层上。 Au膜设置在AuGa膜上。 Pt膜设置在Au膜上。 Au膜设置在Pt膜上。 由此，可以获得具有能够降低P型接触层与P型电极之间的接触电阻的P型电极的氮化物半导体器件。

公开(公告)号：US06617654B2

公开(公告)日：2003-09-09

申请号：US09955488

申请日：2001-09-19

申请人： Toshiyuki Oishi ,  Kohei Sugihara ,  Naruhisa Miura ,  Yuji Abe ,  Yasunori Tokuda

发明人： Toshiyuki Oishi ,  Kohei Sugihara ,  Naruhisa Miura ,  Yuji Abe ,  Yasunori Tokuda

IPC分类号： H01L2976

CPC分类号： H01L29/66628 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7834

摘要： Source and drain regions include regions of an epitaxial silicon film on the surface of the substrate and regions in the substrate. The depth of junctions of the source and drain regions is identical to or shallower than the depth of junctions of extension regions. As a result, even if the thickness of the side wall layer is reduced, since the depletion layer of the extension regions with lower impurity concentration compared with the source and drain regions is predominant, the short channel effect has a smaller effect.

摘要翻译： 源区和漏区包括在衬底的表面上的外延硅膜的区域和衬底中的区域。 源极和漏极区域的结的深度与延伸区域的接合点的深度相同或更浅。 结果，即使侧壁层的厚度减小，由于与源极和漏极区域相比，杂质浓度较低的延伸区域的耗尽层是主要的，所以短沟道效应具有较小的效果。