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公开(公告)号：US20110316047A1
公开(公告)日：2011-12-29
申请号：US13220024
申请日：2011-08-29
申请人： Takuma Nanjo , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
发明人： Takuma Nanjo , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
IPC分类号： H01L29/737
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/432 , H01L29/66462 , H01L29/7783 , H01L29/802
摘要： The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译： 本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件，其具有Al x Ga 1-x N沟道层，Al x Ga 1-x N沟道层的组成比为Al（x（0
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2.发明授权Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region 有权氮化物半导体异质结场效应晶体管具有包括高浓度杂质区域的宽带隙势垒层公开(公告)号：US08035130B2
公开(公告)日：2011-10-11
申请号：US12054714
申请日：2008-03-25
申请人： Takuma Nanjo , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
发明人： Takuma Nanjo , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/432 , H01L29/66462 , H01L29/7783 , H01L29/802
摘要： The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译： 本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件，其具有Al x Ga 1-x N沟道层，Al x Ga 1-x N沟道层的组成比为Al（x（0
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公开(公告)号：US20080237639A1
公开(公告)日：2008-10-02
申请号：US12054714
申请日：2008-03-25
申请人： Takuma NANJO , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
发明人： Takuma NANJO , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
IPC分类号： H01L21/337 , H01L49/00
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/432 , H01L29/66462 , H01L29/7783 , H01L29/802
摘要： The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same.The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译： 本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件，其具有Al组成比为Al的Al x Ga 1-x N沟道层， 0
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