Invention Grant
US09461183B2 Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a reduced surface field effect trench structure
有权
具有减小的表面场效应沟槽结构的二极管和具有减小的表面场效应沟槽结构的二极管的制造方法
- Patent Title: Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a reduced surface field effect trench structure
- Patent Title (中): 具有减小的表面场效应沟槽结构的二极管和具有减小的表面场效应沟槽结构的二极管的制造方法
-
Application No.: US14499654Application Date: 2014-09-29
-
Publication No.: US09461183B2Publication Date: 2016-10-04
- Inventor: Tim Boettcher , Jan Fischer
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP13187183 20131002
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0312 ; H01L29/872 ; H01L29/165 ; H01L21/283 ; H01L29/66 ; H01L29/861 ; H01L29/161 ; H01L29/40 ; H01L29/45 ; H01L29/47
Abstract:
A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.
Public/Granted literature
- US20150091023A1 Semiconductor Device and Method of Manufacturing Public/Granted day:2015-04-02
Information query
IPC分类:
