发明授权
- 专利标题： SiC power device having a high voltage termination
- 专利标题（中）： 具有高电压端接的SiC功率器件
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申请号： US14750655申请日： 2015-06-25
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公开(公告)号： US09461108B2公开(公告)日： 2016-10-04
- 发明人: Andrei Konstantinov
- 申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
- 申请人地址： US CA San Jose
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Brake Hughes Bellermann LLP
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/06 ; H01L29/16 ; H01L29/10 ; H01L29/861 ; H01L29/78 ; H01L29/66 ; H01L29/872 ; H01L29/732
摘要：
In one general aspect, an apparatus can include a semiconductor region including a silicon carbide material and a junction termination extension implant region disposed in the semiconductor region. The apparatus can include a low interface state density portion of a dielectric layer having at least a portion in contact with the junction termination extension implant region.
公开/授权文献
- US20160049465A1 SIC POWER DEVICE HAVING A HIGH VOLTAGE TERMINATION 公开/授权日：2016-02-18
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