发明授权
- 专利标题： Fin shaped semiconductor device structures having tipped end shape and method for fabricating the same
- 专利标题（中）： 具有尖端形状的鳍状半导体器件结构及其制造方法
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申请号： US14748240申请日： 2015-06-24
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公开(公告)号： US09385236B1公开(公告)日： 2016-07-05
- 发明人: Chien-Ying Sun , En-Chiuan Liou , Ming-Shing Chen , Yu-Cheng Tung , Chih-Wei Yang
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 优先权： CN201510273696 20150526
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L27/088 ; G06F17/50
摘要：
A semiconductor device and a method of forming the same, the semiconductor device includes a plurality of fin shaped structures and a dummy gate structure. The fin shaped structures are disposed in a substrate, where at least one of the fin shaped structures has a tipped end. The dummy gate structure is disposed on the substrate, and includes an extending portion covering the tipped end.
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