发明授权
- 专利标题: Three-phase GSHE-MTJ non-volatile flip-flop
- 专利标题(中): 三相GSHE-MTJ非易失性触发器
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申请号: US14498336申请日: 2014-09-26
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公开(公告)号: US09384812B2公开(公告)日: 2016-07-05
- 发明人: Wenqing Wu , Kendrick Hoy Leong Yuen , Karim Arabi
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号: G11C11/18
- IPC分类号: G11C11/18 ; G11C11/16 ; H03K3/356 ; H03K3/3562 ; H03K3/45 ; G11C11/155 ; G11C14/00
摘要:
Systems and methods are directed to a three-phase non-volatile flip-flop (NVFF), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure, with a first GSHE-MTJ and a second GSHE-MTJ coupled between a first combined terminal and a second combined terminal, and a slave stage formed from a first inverter cross-coupled with a second inverter. A first data value is read out from the slave stage during a read phase of the same clock cycle that a second data value is written into the master stage during a write phase. The three-phase NVFF includes three control signals, for controlling an initialization phase of the slave stage, the read phase, and the write phase.
公开/授权文献
- US20150213868A1 THREE-PHASE GSHE-MTJ NON-VOLATILE FLIP-FLOP 公开/授权日:2015-07-30
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