发明授权
- 专利标题： Conformal film deposition for gapfill
- 专利标题（中）： 用于间隙填充的保形膜沉积
-
申请号： US14074596申请日： 2013-11-07
-
公开(公告)号： US09355886B2公开(公告)日： 2016-05-31
- 发明人: Shankar Swaminathan , Bart van Schravendijk , Adrien LaVoie , Sesha Varadarajan , Jason Daejin Park , Michal Danek , Naohiro Shoda
- 申请人： Novellus Systems, Inc.
- 申请人地址： US CA Fremont
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA Fremont
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/762 ; H01L21/67 ; H01L21/02 ; C23C16/04 ; C23C16/455 ; C23C16/56
摘要：
A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD.
公开/授权文献
- US20140134827A1 CONFORMAL FILM DEPOSITION FOR GAPFILL 公开/授权日：2014-05-15
信息查询
IPC分类:
