发明授权
- 专利标题： Methods for manufacturing a fin structure of semiconductor device
- 专利标题（中）： 制造半导体器件的翅片结构的方法
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申请号： US14665869申请日： 2015-03-23
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公开(公告)号： US09343551B2公开(公告)日： 2016-05-17
- 发明人: Kuo-Cheng Ching , Chih-Hao Wang , Zhiqiang Wu , Carlos H. Diaz , Jean-Pierre Colinge
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L31/072
- IPC分类号： H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0336 ; H01L29/66 ; H01L29/78 ; H01L27/12 ; H01L29/06 ; H01L21/02 ; H01L21/3065 ; H01L21/308 ; H01L21/762 ; H01L29/165
摘要：
Semiconductor devices and methods of manufacturing the same are disclosed. In some embodiments, a method of manufacturing a semiconductor device comprises forming a fin structure over a substrate. The fin structure may comprise a lower portion protruding from a major surface of the substrate, an upper portion, and a middle portion between the lower portion and the upper portion, wherein the lower portion and the middle portion differ in composition. The method may further include forming an isolation structure surrounding the fin structure and oxidizing the fin structure. The oxidizing may form a pair of notches extending from sidewalls of the fin structure into the middle portion of the fin structure.
公开/授权文献
- US20150194503A1 Fin Structure of Semiconductor Device 公开/授权日：2015-07-09
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