发明授权
- 专利标题： Field effect transistor devices with protective regions
- 专利标题（中）： 具有保护区域的场效应晶体管器件
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申请号： US13799049申请日： 2013-03-13
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公开(公告)号： US09306061B2公开(公告)日： 2016-04-05
- 发明人: Lin Cheng , Anant Agarwal , Vipindas Pala , John Palmour
- 申请人： Cree, Inc.
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel & Sibley, P.A.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L29/78 ; H01L29/66 ; H01L29/739 ; H01L29/16
摘要：
A transistor device includes a first conductivity type drift layer, a second conductivity type first region in the drift layer, a body layer having the second conductivity type on the drift layer including the first region, a source layer on the body layer, and a body contact region that extends through the source layer and the body layer and into the first region. The transistor device further includes a trench through the source layer and the body layer and extending into the drift layer adjacent the first region. The trench has an inner sidewall facing away from the first region. A gate insulator is on the inner sidewall of the trench, and a gate contact is on the gate insulator.
公开/授权文献
- US20140264563A1 Field Effect Transistor Devices with Protective Regions 公开/授权日：2014-09-18
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