发明授权
- 专利标题： Laser annealing of GaN LEDs with reduced pattern effects
- 专利标题（中）： 具有减少图案效果的GaN LED的激光退火
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申请号： US13678946申请日： 2012-11-16
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公开(公告)号： US09190570B2公开(公告)日： 2015-11-17
- 发明人: Andrew M. Hawryluk , Yun Wang
- 申请人： Andrew M. Hawryluk , Yun Wang
- 申请人地址： US CA San Jose
- 专利权人： Ultratech, Inc.
- 当前专利权人： Ultratech, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Opticus IP Law PLLC
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/76 ; H01L31/036 ; H01L31/112 ; H01L33/32 ; H01L33/38 ; H01L33/00
摘要：
The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
公开/授权文献
- US20140131723A1 LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS 公开/授权日：2014-05-15
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