Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and method of manufacturing the same
- Patent Title (中): 非易失性半导体存储器件及其制造方法
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Application No.: US13547645Application Date: 2012-07-12
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Publication No.: US09087715B2Publication Date: 2015-07-21
- Inventor: Haruka Kusai , Kiwamu Sakuma , Shosuke Fujii , Masumi Saitoh , Masahiro Kiyotoshi
- Applicant: Haruka Kusai , Kiwamu Sakuma , Shosuke Fujii , Masumi Saitoh , Masahiro Kiyotoshi
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-157157 20110715
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/088 ; H01L21/265 ; H01L21/02 ; H01L21/3205 ; H01L21/768 ; H01L27/24 ; G11C16/04 ; H01L29/66 ; H01L29/68 ; H01L29/788 ; H01L29/792 ; G11C16/10 ; H01L29/82
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion provided at one end of the beam, and a low resistance portion provided between the contact portion and the end portion of the structure.
Public/Granted literature
- US20130175490A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-07-11
Information query
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