发明授权
- 专利标题: On-chip memory (OCM) physical bank parallelism
- 专利标题(中): 片上存储器(OCM)物理存储器并行
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申请号: US13565736申请日: 2012-08-02
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公开(公告)号: US08966152B2公开(公告)日: 2015-02-24
- 发明人: Gregg A. Bouchard , Rajan Goyal , Jeffrey A. Pangborn , Najeeb I. Ansari
- 申请人: Gregg A. Bouchard , Rajan Goyal , Jeffrey A. Pangborn , Najeeb I. Ansari
- 申请人地址: US CA San Jose
- 专利权人: Cavium, Inc.
- 当前专利权人: Cavium, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Hamilton, Brook, Smith & Reynolds, P.C.
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F9/46 ; G06F13/16 ; G06F12/08 ; G06F12/02 ; G06F12/04 ; G06N5/02 ; H04L12/26 ; H04L29/06 ; H04L12/747 ; H04L12/851 ; H04L12/801 ; H04L12/741 ; G06F9/50 ; H04L29/08
摘要:
According to an example embodiment, a processor is provided including an integrated on-chip memory device component. The on-chip memory device component includes a plurality of memory banks, and multiple logical ports, each logical port coupled to one or more of the plurality of memory banks, enabling access to multiple memory banks, among the plurality of memory banks, per clock cycle, each memory bank accessible by a single logical port per clock cycle and each logical port accessing a single memory bank per clock cycle.
公开/授权文献
- US20130036274A1 ON-CHIP MEMORY (OCM) PHYSICAL BANK PARALLELISM 公开/授权日:2013-02-07
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