Invention Grant
- Patent Title: Deposition on a nanowire using atomic layer deposition
- Patent Title (中): 使用原子层沉积在纳米线上沉积
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Application No.: US13013067Application Date: 2011-01-25
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Publication No.: US08900935B2Publication Date: 2014-12-02
- Inventor: Dechao Guo , Zhengwen Li , Kejia Wang , Zhen Zhang , Yu Zhu
- Applicant: Dechao Guo , Zhengwen Li , Kejia Wang , Zhen Zhang , Yu Zhu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Agent Louis J. Percello
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L21/336 ; H01L51/05 ; H01L29/78 ; B82Y40/00 ; H01L29/66 ; H01L29/06 ; H01L27/12 ; H01L29/47 ; H01L21/84 ; B82Y30/00 ; H01L51/00
Abstract:
In one exemplary embodiment, a method includes: providing a semiconductor device having a substrate, a nanowire, a first structure and a second structure, where the nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate; and performing atomic layer deposition to deposit a film on at least a portion of the semiconductor device, where performing atomic layer deposition to deposit the film includes performing atomic layer deposition to deposit the film on at least a surface of the nanowire.
Public/Granted literature
- US20120187375A1 Deposition On A Nanowire Using Atomic Layer Deposition Public/Granted day:2012-07-26
Information query
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