发明授权
- 专利标题： PMOS pass gate
- 专利标题（中）： PMOS通孔
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申请号： US13181219申请日： 2011-07-12
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公开(公告)号： US08804407B1公开(公告)日： 2014-08-12
- 发明人: Jun Liu , Albert Ratnakumar , Irfan Rahim , Qi Xiang
- 申请人： Jun Liu , Albert Ratnakumar , Irfan Rahim , Qi Xiang
- 申请人地址： US CA San Jose
- 专利权人： Altera Corporation
- 当前专利权人： Altera Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Mauriel Kapouytian Woods LLP
- 代理商 Ararat Kapouytian
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
An IC that includes a memory cell and a pass gate coupled to the memory cell, where the pass gate includes a PMOS transistor, is described. In one implementation, the PMOS transistor has a negative threshold voltage. In one implementation, the memory cell includes thick oxide transistors.
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