Invention Grant
- Patent Title: Semiconductor having a high aspect ratio via
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Application No.: US13481574Application Date: 2012-05-25
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Publication No.: US08598687B2Publication Date: 2013-12-03
- Inventor: Yuan-Chih Hsieh , Richard Chu , Ming-Tung Wu , Martin Liu , Lan-Lin Chao , Chia-Shiung Tsai
- Applicant: Yuan-Chih Hsieh , Richard Chu , Ming-Tung Wu , Martin Liu , Lan-Lin Chao , Chia-Shiung Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer.
Public/Granted literature
- US20120235300A1 SEMICONDUCTOR HAVING A HIGH ASPECT RATIO VIA Public/Granted day:2012-09-20
Information query
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