Invention Grant
US08178884B2 Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same
有权
包括化合物半导体氧化物的薄膜晶体管,其制造方法和具有该半导体氧化物的平板显示装置
- Patent Title: Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same
- Patent Title (中): 包括化合物半导体氧化物的薄膜晶体管,其制造方法和具有该半导体氧化物的平板显示装置
-
Application No.: US12393422Application Date: 2009-02-26
-
Publication No.: US08178884B2Publication Date: 2012-05-15
- Inventor: Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
- Applicant: Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
- Applicant Address: KR Yongin
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2008-0066002 20080708
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/15 ; H01L31/036 ; H01L29/10 ; H01L31/0376 ; H01L31/20 ; H01L29/76 ; H01L31/112 ; H01L29/12 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L31/062 ; H01L31/113
Abstract:
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
Public/Granted literature
- US20100006833A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME Public/Granted day:2010-01-14
Information query
IPC分类: