Invention Grant
US08178884B2 Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same 有权
包括化合物半导体氧化物的薄膜晶体管,其制造方法和具有该半导体氧化物的平板显示装置

Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same
Abstract:
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
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