发明授权
- 专利标题: Semiconductor light-emitting device and producing method for the same
- 专利标题(中): 半导体发光器件及其制造方法
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申请号: US11531577申请日: 2006-09-13
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公开(公告)号: US07642542B2公开(公告)日: 2010-01-05
- 发明人: Mariko Suzuki , Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida
- 申请人: Mariko Suzuki , Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-285592 20050929
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L29/24
摘要:
A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.
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