发明授权
- 专利标题: Optical proximity correction method
- 专利标题(中): 光学邻近校正方法
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申请号: US11380192申请日: 2006-04-25
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公开(公告)号: US07297450B2公开(公告)日: 2007-11-20
- 发明人: Jiunn-Ren Hwang , Jui-Tsen Huang , Chang-Jyh Hsieh
- 申请人: Jiunn-Ren Hwang , Jui-Tsen Huang , Chang-Jyh Hsieh
- 申请人地址: TW Hsin-Chu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Winston Hsu
- 主分类号: G03F9/00
- IPC分类号: G03F9/00
摘要:
An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.
公开/授权文献
- US20060183031A1 OPTICAL PROXIMITY CORRECTION METHOD 公开/授权日:2006-08-17
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