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US5882984A Method for increasing the refresh time of the DRAM 失效
增加DRAM刷新时间的方法

Method for increasing the refresh time of the DRAM
Abstract:
The present invention is a method for increasing the refresh time of DRAM. This invention is for decreasing the stress between the bird's beak of field oxide and silicon substrate by using fluorine ion implant before field oxidation and the optimal structure of LOCOS to effectively preventing the current leakage from the bird's beak of field oxide. Therefore, this invention can increase the refresh time of DRAM and greatly enhance the performance in DRAM.
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