Invention Grant
- Patent Title: Method for forming a semiconductor device having a capacitor
- Patent Title (中): 用于形成具有电容器的半导体器件的方法
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Application No.: US678291Application Date: 1996-07-11
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Publication No.: US5795794APublication Date: 1998-08-18
- Inventor: Yoshihisa Nagano , Eiji Fujii , Toru Nasu , Akihiro Matsuda
- Applicant: Yoshihisa Nagano , Eiji Fujii , Toru Nasu , Akihiro Matsuda
- Applicant Address: JPX Osaka
- Assignee: Matsushita Electronics Corporation
- Current Assignee: Matsushita Electronics Corporation
- Current Assignee Address: JPX Osaka
- Priority: JPX7-178523 19950714
- Main IPC: H01L27/04
- IPC: H01L27/04 ; H01L21/02 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L27/105 ; H01L27/108 ; H01L21/70 ; H01L27/00
Abstract:
The present invention relates to method of manufacturing semiconductor devices having built-in capacitor comprising a dielectric substance of high dielectric constant or a ferroelectric substance as the capacitance insulation film, and aims to solve a problem that the prior art capacitance insulation film contained in semiconductor devices has a rough surface which results in a poor insulating voltage and a large spread in electrical characteristics, as well as broken connection wire; in which method a capacitance insulation film is produced by first forming a first dielectric film, and forming a second dielectric film on the first dielectric film for a thickness greater than the difference in level between top and bottom of the surface of first dielectric film, and forming a thin film whose etching speed is identical with that of the second dielectric film on the second dielectric film making the surface of thin film flat, and then etching the whole of the thin film and part of the second dielectric film off simultaneously to make the surface of second dielectric film flat.
Public/Granted literature
- US5186823A Hydrocylone apparatus for separating dense particles from a flowing liquid Public/Granted day:1993-02-16
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