Invention Grant
- Patent Title: Active matrix substrate device and related method
- Patent Title (中): 有源矩阵衬底器件及相关方法
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Application No.: US818573Application Date: 1992-01-09
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Publication No.: US5351145APublication Date: 1994-09-27
- Inventor: Yutaka Miyata , Mamoru Furuta , Tatsuo Yoshioka , Hiroshi Tsutsu , Tetsuya Kawamura
- Applicant: Yutaka Miyata , Mamoru Furuta , Tatsuo Yoshioka , Hiroshi Tsutsu , Tetsuya Kawamura
- Applicant Address: JPX Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JPX Osaka
- Priority: JPX3-002640 19910114
- Main IPC: G02F1/133
- IPC: G02F1/133 ; G02F1/136 ; G02F1/1362 ; G02F1/1368 ; G09G3/20 ; G09G3/36 ; G11C11/00 ; G11C11/404
Abstract:
An active matrix substrate includes a transparent substrate, pairs each having an n-type thin-film transistor and a p-type thin-film transistor formed on the transparent substrate, gate bus lines and source bus lines connected to the n-type and p-type transistors for controlling the n-type and p-type transistors, and pixel-corresponding electrodes controlled by the transistor pairs respectively. Drains of an n-type transistor and a p-type transistor in each of the pairs are connected to each other via a related pixel corresponding electrode. First pulses are applied to gates of the n-type transistors. Second pulses are applied to gates of the p-type transistors. There is provided a difference in phase between the first pulses and the second pulses.
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