发明授权
US4792835A MOS programmable memories using a metal fuse link and process for making
the same
失效
使用金属熔断体的MOS可编程存储器和制造相同的工艺
- 专利标题： MOS programmable memories using a metal fuse link and process for making the same
- 专利标题（中）： 使用金属熔断体的MOS可编程存储器和制造相同的工艺
-
申请号： US938226申请日： 1986-12-05
-
公开(公告)号： US4792835A公开(公告)日： 1988-12-20
- 发明人: Stephen P. Sacarisen , Gene E. Blankenship , Rajiv R. Shah , Toan Tran , David J. Myers , Johnson J. Lin , Steve Thompson
- 申请人： Stephen P. Sacarisen , Gene E. Blankenship , Rajiv R. Shah , Toan Tran , David J. Myers , Johnson J. Lin , Steve Thompson
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L21/8246 ; H01L23/525 ; H01L27/10 ; H01L27/112 ; H01L29/78 ; B44C1/22 ; C23F1/02 ; H01L21/00
摘要：
A process for making a metal fuse link in a MOS or CMOS process which includes depositing a refractory metal or metal alloy over an already deposited multi-level oxide and patterning the deposited metal or metal alloy so that it has a fusing segment between and integral with expanded segments such that the length and cross sectional area of the fusing segment is sufficiently small so that the fusing current therethrough is less than 20 milliamperes. The fuse and surrounding circuitry is covered with a passivation layer and contacts formed in the passivation layer to the expanded segments.
公开/授权文献
- US4189519A Heat sealable resin blends 公开/授权日：1980-02-19
信息查询
IPC分类:
