发明公开
- 专利标题： POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR DEVICE
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申请号： US18283169申请日： 2022-02-18
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公开(公告)号： US20240170566A1公开(公告)日： 2024-05-23
- 发明人: Andrei MIHAILA , Munaf RAHIMO , Lars KNOLL , Marco BELLINI
- 申请人： HITACHI ENERGY LTD
- 申请人地址： CH Zürich
- 专利权人： HITACHI ENERGY LTD
- 当前专利权人： HITACHI ENERGY LTD
- 当前专利权人地址： CH Zürich
- 优先权： EP 163984.4 2021.03.22
- 国际申请： PCT/EP2022/054110 2022.02.18
- 进入国家日期： 2023-09-20
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/66 ; H01L29/739
摘要：
A power semiconductor device (1) is provided, comprising
a drift layer (2) of a first conductivity type,
at least two well regions (3) of a second conductivity type being different from the first conductivity type, and
at least one intermediate region (4), wherein
the at least two well regions (3) and the at least one intermediate region (4) are provided within the drift layer (2) at a first side,
the at least one intermediate region (4) is provided between the at least two well regions (3), and
the at least one intermediate region (4) comprises at least one first doped region (5) of the first conductivity type and at least one second doped region (6) of the second conductivity type.
a drift layer (2) of a first conductivity type,
at least two well regions (3) of a second conductivity type being different from the first conductivity type, and
at least one intermediate region (4), wherein
the at least two well regions (3) and the at least one intermediate region (4) are provided within the drift layer (2) at a first side,
the at least one intermediate region (4) is provided between the at least two well regions (3), and
the at least one intermediate region (4) comprises at least one first doped region (5) of the first conductivity type and at least one second doped region (6) of the second conductivity type.
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IPC分类:
