Invention Publication
- Patent Title: SMART EARLY DETECTION OF WORDLINE-MEMORY HOLE DEFECTS WITH WORDLINE-DEPENDENT DUAL SENSING DURING ERASE VERIFY
-
Application No.: US17741074Application Date: 2022-05-10
-
Publication No.: US20230368850A1Publication Date: 2023-11-16
- Inventor: Huiwen Xu , Bo Lei , Jun Wan
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/16 ; G11C16/26 ; G11C16/08

Abstract:
An apparatus disclosed herein comprises: a plurality of memory cells and a control circuit coupled to the plurality of memory cells. The control circuit is configured to: erase a block; verify, using a first erase verify level, that the block was properly erased; verify, using a second erase verify level, that the block was properly erased; determine whether there are any mismatches in a plurality of verify statuses between neighboring wordlines of the block from verifying the block using the second erase verify level; and identify, based on the determination, whether the block has failed.
Public/Granted literature
Information query