SMART EARLY DETECTION OF WORDLINE-MEMORY HOLE DEFECTS WITH WORDLINE-DEPENDENT DUAL SENSING DURING ERASE VERIFY
Abstract:
An apparatus disclosed herein comprises: a plurality of memory cells and a control circuit coupled to the plurality of memory cells. The control circuit is configured to: erase a block; verify, using a first erase verify level, that the block was properly erased; verify, using a second erase verify level, that the block was properly erased; determine whether there are any mismatches in a plurality of verify statuses between neighboring wordlines of the block from verifying the block using the second erase verify level; and identify, based on the determination, whether the block has failed.
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