- 专利标题： TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
-
申请号： US17725842申请日： 2022-04-21
-
公开(公告)号： US20220246843A1公开(公告)日： 2022-08-04
- 发明人: Harry-Hak-Lay Chuang , Chen-Pin Hsu , Hung Cho Wang , Wen-Chun You , Sheng-Chang Chen , Tsun Chung Tu , Jiunyu Tsai , Sheng-Huang Huang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L43/12
- IPC分类号： H01L43/12 ; H01L43/02 ; H01F10/32 ; H01L27/22 ; H01L23/528 ; H01F41/32 ; H01L21/768 ; H01L23/522
摘要：
Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode. A sidewall spacer comprises a first spacer on the first sidewall of the top electrode and a second spacer on the second sidewall of the top electrode. A first surface of the first spacer comprises a first curve and a second surface of the second spacer comprises a second curve. A dielectric layer is around the MTJ and top electrode.
信息查询
IPC分类:
