- 专利标题: NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME
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申请号: US17542183申请日: 2021-12-03
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公开(公告)号: US20220093195A1公开(公告)日: 2022-03-24
- 发明人: Sun-Il SHIM , Jae-Hoon JANG , Donghyuk CHAE , Youngho LIM , Hansoo KIM , Jaehun JEONG
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2010-0014275 20100217
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C16/04 ; H01L27/11582 ; G11C5/06 ; G11C11/4074 ; G11C11/408 ; G11C11/4096 ; G11C16/08 ; G11C16/12 ; G11C16/14 ; G11C16/26 ; G11C16/10
摘要:
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
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