- 专利标题： APPARATUS AND METHODS FOR INTEGRATING MAGNETORESISTIVE DEVICES
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申请号： US16183956申请日： 2018-11-08
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公开(公告)号： US20190140019A1公开(公告)日： 2019-05-09
- 发明人: Kerry Joseph NAGEL , Sanjeev AGGARWAL , Sarin A. DESHPANDE
- 申请人： Everspin Technologies, Inc.
- 申请人地址： US AZ Chandler
- 专利权人： Everspin Technologies, Inc.
- 当前专利权人： Everspin Technologies, Inc.
- 当前专利权人地址： US AZ Chandler
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/12 ; H01L43/08 ; H01L43/02
摘要：
An integrated circuit device includes a memory portion and a logic portion. The memory portion may include a plurality of magnetoresistive devices and the logic portion may include logic circuits. The memory portion may include a plurality of metal conductors separated by a first interlayer dielectric material (ILD), wherein the first ILD is a low-k ILD or an ultra low-k ILD. And, the logic portion may include a plurality of metal conductors separated by a second interlayer dielectric material (ILD).
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