Disclosed herein are systems, methods, and devices for parallel read and write operations. Devices may include a first transmission device coupled to a local bit line and a global bit line associated with a memory unit of a memory array. The first transmission device may be configured to selectively couple the global bit line to the local bit line. The devices may further include a first device coupled to the local bit line and a sense amplifier. The first device may be configured to selectively couple the local bit line to the sense amplifier. The devices may also include a second device coupled to the local bit line and an electrical ground. The second device may be configured to selectively couple the local bit line to the electrical ground.