发明申请
US20160190310A1 RADIO FREQUENCY LDMOS DEVICE AND A FABRICATION METHOD THEREFOR
有权
无线电频率LDMOS器件及其制造方法
- 专利标题： RADIO FREQUENCY LDMOS DEVICE AND A FABRICATION METHOD THEREFOR
- 专利标题（中）： 无线电频率LDMOS器件及其制造方法
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申请号： US14978267申请日： 2015-12-22
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公开(公告)号： US20160190310A1公开(公告)日： 2016-06-30
- 发明人: Han Yu , Zhengliang Zhou , Xi Chen
- 申请人： SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- 申请人地址： CN Shanghai
- 专利权人： SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- 当前专利权人： SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- 当前专利权人地址： CN Shanghai
- 优先权： CN201410842286.8 20141229
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L23/66 ; H01L29/40 ; H01L29/66 ; H01L29/10
摘要：
A radio frequency LDMOS device, wherein the drift region includes a first injection region and a second injection region; the first injection region situated between a second lateral surface of a polysilicon gate and a second lateral surface of a first Faraday shielding layer; the second injection region situated between the second lateral surface of the first Faraday shielding layer and the drain region and encloses the drain region; the second lateral surface of the second Faraday shielding layer is a surface of a side near the drain region, the maximum electric field strength of the drift region on the bottom of the second lateral surface of the second Faraday shielding layer is regulated via regulation of the doping concentration of the second injection region; the doping concentration of the first injection region is higher than the second injection region.
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