Invention Application
US20160148935A1 FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE WITH CONTROLLED END-TO-END CRITICAL DIMENSION AND METHOD FOR FORMING THE SAME
有权
具有受控的端到端关键尺寸的FIN场效应晶体管（FINFET）器件及其形成方法
- Patent Title: FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE WITH CONTROLLED END-TO-END CRITICAL DIMENSION AND METHOD FOR FORMING THE SAME
- Patent Title (中): 具有受控的端到端关键尺寸的FIN场效应晶体管（FINFET）器件及其形成方法
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Application No.: US14554682Application Date: 2014-11-26
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Publication No.: US20160148935A1Publication Date: 2016-05-26
- Inventor: Chang-Yin CHEN , Tung-Wen CHENG , Che-Cheng CHANG , Chun-Lung NI , Jr-Jung LIN , Chih-Han LIN
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/06 ; H01L29/51 ; H01L21/033 ; H01L21/8238 ; H01L21/8234 ; H01L21/02 ; H01L21/311 ; H01L27/088 ; H01L29/49
Abstract:
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extending above the substrate. The FinFET device structure also includes a first transistor formed on the first fin structure and a second transistor formed on the second fin structure. The FinFET device structure further includes an inter-layer dielectric (ILD) structure formed in an end-to-end gap between the first transistor and the second transistor, and the end-to-end gap has a width in a range from about 20 nm to about 40 nm.
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