Invention Grant
- Patent Title: Interconnect structure and manufacturing method for the same
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Application No.: US17459961Application Date: 2021-08-27
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Publication No.: US12002709B2Publication Date: 2024-06-04
- Inventor: Hsiang-Wei Liu , Wei-Chen Chu , Chia-Tien Wu , Tai-I Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US17026294 2020.09.20
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/311 ; H01L21/768 ; H01L23/48 ; H01L23/52 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L21/027
Abstract:
The present disclosure provides an interconnect structure, including a first metal line, a second metal line spaced away from the first metal line, a conductive contact over the first metal line, including a first portion, a second portion over the first portion, wherein a bottom width of the second portion is greater than a top width of the first portion, wherein a shortest distance between the second portion and the second metal line is in a range from 50 Angstrom to 200 Angstrom, and a third portion over the second portion, wherein a bottom width of the third portion is greater than a top width of the second portion, the entire first portion and the entire second portion are under a coverage of a vertical projection area of the third portion, a first layer, and a second layer over the first layer.
Public/Granted literature
- US20210391211A1 INTERCONNECT STRUCTURE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2021-12-16
Information query
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