Invention Grant
- Patent Title: Non-volatile memory with redundant control line driver
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Application No.: US17589973Application Date: 2022-02-01
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Publication No.: US11908521B2Publication Date: 2024-02-20
- Inventor: Liang Li , Qin Zhen
- Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/08 ; H02M3/07 ; G11C29/12 ; G11C16/30 ; H01L25/065 ; H10B43/27

Abstract:
A non-volatile memory includes memory cells, word lines connected to the memory cells, and a set of regular control gate drivers connected to the word lines. The control gate drivers include different subsets of control gate drivers that receive different sources of voltage and provide different output voltages. A redundant control gate driver, that receives the different sources of voltage and provides the different output voltages, is included that can replace any of the regular control gate drivers.
Public/Granted literature
- US20230245703A1 NON-VOLATILE MEMORY WITH REDUNDANT CONTROL LINE DRIVER Public/Granted day:2023-08-03
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