Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17345399Application Date: 2021-06-11
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Publication No.: US11887935B2Publication Date: 2024-01-30
- Inventor: Takehiro Ueda
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Rimon P.C.
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/304 ; H01L21/66 ; H01L23/31 ; H01L23/482 ; H01L29/40 ; H01L29/78

Abstract:
A method for manufacturing a semiconductor device includes forming semiconductor devices from a semiconductor wafer and identifying a position of the semiconductor device in the semiconductor wafer, wherein the forming the semiconductor devices includes forming a first repeating pattern including i semiconductor devices each having a unique pattern, forming a second repeating pattern including j semiconductor devices each having a unique pattern, defining semiconductor devices on the semiconductor wafer such that each of the k semiconductor devices has a unique pattern based on the first and second repeating patterns, and grinding a backside of the semiconductor wafer, wherein each unique pattern of the k semiconductor devices is composed of a combination of the unique patterns of the first and second repeating patterns, wherein the position of the semiconductor device is identified based on the unique patterns of the first and second repeating patterns and an angle of a grinding mark.
Public/Granted literature
- US20220399281A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-12-15
Information query
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