Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US17867702Application Date: 2022-07-19
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Publication No.: US11818965B2Publication Date: 2023-11-14
- Inventor: Hui-Lin Wang , Chia-Chang Hsu , Chen-Yi Weng , Chin-Yang Hsieh , Jing-Yin Jhang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1811267036.0 2018.10.29
- The original application number of the division: US16200520 2018.11.26
- Main IPC: H10B61/00
- IPC: H10B61/00 ; H10N50/80 ; H01F41/34 ; H01F10/32 ; G11C11/16 ; H10N50/01 ; H10N50/85
Abstract:
A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a contact plug on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.
Public/Granted literature
- US20220352459A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-11-03
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