- 专利标题： Integrated circuit devices with an engineered substrate
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申请号： US17387861申请日： 2021-07-28
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公开(公告)号： US11735460B2公开(公告)日： 2023-08-22
- 发明人: Vladimir Odnoblyudov , Dilip Risbud , Ozgur Aktas , Cem Basceri
- 申请人： QROMIS, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Qromis, Inc.
- 当前专利权人： Qromis, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 分案原申请号： US16213512 2018.12.07
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/683 ; H01L21/762 ; H01L29/861 ; H01L21/285 ; H01L21/18 ; H01L21/02 ; H01L21/28 ; H01L21/48 ; H01L29/10 ; H01L29/20 ; H01L29/205 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; C30B25/18 ; C30B29/06 ; C30B29/40 ; H01L29/872 ; H01L29/40
摘要：
An integrated circuit device includes an engineered substrate including a substantially single crystal layer and a buffer layer coupled to the substantially single crystal layer. The integrated circuit device also includes a plurality of semiconductor devices coupled to the buffer layer. The plurality of semiconductor devices can include a first power device coupled to a first portion of the buffer layer and a second power device coupled to a second portion of the buffer layer. The first power device includes a first channel region comprising a first end, a second end, and a first central portion disposed between the first end and the second end. The second power device includes a second channel region comprising a third end, a fourth end, and a second central portion disposed between the third end and the fourth end.
公开/授权文献
- US20210358795A1 INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE 公开/授权日：2021-11-18
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