- 专利标题: Quantum well stacks for quantum dot devices
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申请号: US17364985申请日: 2021-07-01
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公开(公告)号: US11721724B2公开(公告)日: 2023-08-08
- 发明人: Nicole K. Thomas , James S. Clarke , Jessica M. Torres , Ravi Pillarisetty , Kanwaljit Singh , Payam Amin , Hubert C. George , Jeanette M. Roberts , Roman Caudillo , David J. Michalak , Zachary R. Yoscovits , Lester Lampert
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Akona IP
- 主分类号: H01L29/12
- IPC分类号: H01L29/12 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/82
摘要:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.
公开/授权文献
- US20210328019A1 QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES 公开/授权日:2021-10-21
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