Invention Grant
- Patent Title: Backside connection structures for nanostructures and methods of forming the same
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Application No.: US17676300Application Date: 2022-02-21
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Publication No.: US11721623B2Publication Date: 2023-08-08
- Inventor: Li-Zhen Yu , Chia-Hao Chang , Lin-Yu Huang , Cheng-Chi Chuang , Chih-Hao Wang
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/528 ; H01L29/423 ; H01L21/768 ; H01L23/535 ; H01L29/45 ; H01L29/786
Abstract:
A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. A first recess cavity is formed over a gate electrode, and a second recess cavity is formed over the epitaxial semiconductor material portion. The second recess cavity is vertically recessed to form a connector via cavity. A metallic cap structure is formed on the gate electrode in the first recess cavity, and a connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.
Public/Granted literature
- US20220181250A1 BACKSIDE CONNECTION STRUCTURES FOR NANOSTRUCTURES AND METHODS OF FORMING THE SAME Public/Granted day:2022-06-09
Information query
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