- 专利标题： Single sided channel mesa power junction field effect transistor
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申请号： US16999942申请日： 2020-08-21
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公开(公告)号： US11545585B2公开(公告)日： 2023-01-03
- 发明人: Vipindas Pala , Sudarsan Uppili
- 申请人： MONOLITHIC POWER SYSTEMS, INC.
- 申请人地址： US CA San Jose
- 专利权人： MONOLITHIC POWER SYSTEMS, INC.
- 当前专利权人： MONOLITHIC POWER SYSTEMS, INC.
- 当前专利权人地址： US CA San Jose
- 代理机构： Beyer Law Group LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/808 ; H01L21/04 ; H01L29/10 ; H01L29/66 ; H01L29/16
摘要：
Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed JFET includes a vertical channel region located in a mesa and a first channel control region located on a first side of the mesa. The first channel control region is at least one of a gate region and a first base region. The JEFT also includes a second base region located on a second side of the mesa and extending through the mesa to contact the vertical channel region. The vertical channel can be an implanted vertical channel. The vertical channel can be asymmetrically located in the mesa towards the first side of the mesa.
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