- 专利标题： Semiconductor structure and method of forming the same
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申请号： US17192607申请日： 2021-03-04
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公开(公告)号： US11508816B2公开(公告)日： 2022-11-22
- 发明人: Te-An Chen , Meng-Han Lin
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT Law
- 代理商 Anthony King
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/76 ; H01L21/265 ; H01L21/762 ; H01L29/78
摘要：
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate including a well region and an adjustment region over the well region. An isolation structure is disposed over the substrate and at least partially surrounds the well region and the adjustment region. An epitaxial layer is disposed over the adjustment region and surrounded by the isolation structure. A gate structure is disposed on the epitaxial layer. The present disclosure also provides a method for forming a semiconductor structure.
公开/授权文献
- US20220285496A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME 公开/授权日：2022-09-08
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