- 专利标题： Memory device having vertical structure
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申请号： US17145209申请日： 2021-01-08
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公开(公告)号： US11380702B2公开(公告)日： 2022-07-05
- 发明人: Jin Ho Kim , Kwang Hwi Park , Sang Hyun Sung , Sung Lae Oh , Chang Woon Choi
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2020-0082736 20200706
- 主分类号： H01L27/11556
- IPC分类号： H01L27/11556 ; H01L27/11573 ; H01L27/11582 ; H01L27/11526
摘要：
A memory device includes a cell wafer including a memory cell array; and a peripheral wafer including a row control circuit, a column control circuit and a peripheral circuit which control the memory cell array, and stacked on and bonded to the cell wafer in a first direction. The peripheral wafer includes a first substrate having a first surface and a second surface which face away from each other in the first direction; a first logic structure disposed on the first surface of the first substrate, and including the row control circuit and the column control circuit; and a second logic structure disposed on the second surface of the first substrate, and including the peripheral circuit.
公开/授权文献
- US20220005820A1 MEMORY DEVICE HAVING VERTICAL STRUCTURE 公开/授权日：2022-01-06
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