- 专利标题: Variable resistance memory device
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申请号: US16741936申请日: 2020-01-14
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公开(公告)号: US11276821B2公开(公告)日: 2022-03-15
- 发明人: Seulji Song , Jonguk Kim , Kyusul Park , Woohyun Park , Jonghyun Paek
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2019-0124153 20191007
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24
摘要:
A semiconductor device includes a plurality of first conductive lines disposed on a substrate, a plurality of second conductive lines intersecting the plurality of first conductive lines, and a plurality of cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines. At least one among the plurality of cell structures includes a first electrode, a switching element disposed on the first electrode, a second electrode disposed on the switching element, a first metal pattern disposed on the second electrode, a variable resistance pattern interposed between the first metal pattern and at least one among the plurality of second conductive lines, and a first spacer disposed on a sidewall of the variable resistance pattern, a sidewall of the first metal pattern and a sidewall of the second electrode.
公开/授权文献
- US20210104671A1 VARIABLE RESISTANCE MEMORY DEVICE 公开/授权日:2021-04-08
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