- 专利标题： Semiconductor device and method of manufacturing semiconductor device
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申请号： US17011788申请日： 2020-09-03
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公开(公告)号： US11245010B2公开(公告)日： 2022-02-08
- 发明人: Kosuke Yoshida , Haruo Nakazawa , Kenichi Iguchi , Koh Yoshikawa , Motoyoshi Kubouchi
- 申请人： FUJI ELECTRIC CO., LTD.
- 申请人地址： JP Kawasaki
- 专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人地址： JP Kawasaki
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JPJP2019-187499 20191011
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/739 ; H01L29/66 ; H01L29/78 ; H01L21/225 ; H01L29/06 ; H01L21/265
摘要：
A semiconductor device having a semiconductor substrate that includes a first-conductivity-type substrate and a first-conductivity-type epitaxial layer, and a plurality of trenches reaching a predetermined depth from a main surface of the semiconductor substrate to terminate in the first-conductivity-type epitaxial layer. The semiconductor substrate includes a hydrogen-donor introduced part, of which a concentration of a hydrogen donor is greatest at a depth position that is separate from bottoms of the trenches by a distance at least two times of the depth of the trenches. The impurity concentration of an impurity dopant of the first-conductivity-type substrate being lower than that of the first-conductivity-type epitaxial layer. A difference between a first resistivity, corresponding to a total impurity concentration of the impurity dopant and the hydrogen donor of the first-conductivity-type substrate, and a second resistivity, corresponding to the impurity concentration of the impurity dopant of the first-conductivity-type epitaxial layer, is at most 20%.
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