发明授权
- 专利标题： Semiconductor device with fin end spacer plug and method of manufacturing the same
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申请号： US16535975申请日： 2019-08-08
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公开(公告)号： US11244867B2公开(公告)日： 2022-02-08
- 发明人: Tzu-Chung Wang , Tung Ying Lee
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L27/088
摘要：
A semiconductor device includes a plurality of fins on a substrate, a fin end spacer plug on an end surface of each of the plurality of fins and a fin liner layer, an insulating layer on the plurality of fins, and a source/drain epitaxial layer in a source/drain recess in each of the plurality of fins.
信息查询
IPC分类:
