- 专利标题: Shared error detection and correction memory
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申请号: US16537076申请日: 2019-08-09
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公开(公告)号: US11222708B2公开(公告)日: 2022-01-11
- 发明人: Tomoyuki Shibata , Chikara Kondo , Hiroyuki Tanaka
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: G11C29/38
- IPC分类号: G11C29/38 ; G11C29/12 ; G11C29/00 ; G11C29/14 ; G11C29/36 ; G11C29/42 ; G11C29/44 ; G11C29/48 ; G11C5/02 ; G11C29/04
摘要:
Apparatuses and methods of sharing error correction memory on an interface chip are described. An example apparatus includes: at least one memory chip having a plurality of first memory cells and an interface chip coupled to the at least one memory chip and having a control circuit and a storage area. The control circuit detects one or more defective memory cells of the first memory cells of the at least one memory chip. The control circuit further stores first defective address information of the one or more defective memory cells of the first memory cells into the storage area. The interface chip responds to the first defective address information and an access request to access the storage area in place of the at least one memory chip when the access request has been provided with respect to the one or more defective memory cells of the first memory cells.
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