Invention Grant
- Patent Title: Static random-access memory (SRAM) system with delay tuning and control and a method thereof
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Application No.: US16720888Application Date: 2019-12-19
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Publication No.: US11017848B2Publication Date: 2021-05-25
- Inventor: Ambuj Jain , Akash Kumar Gupta , Manish Chandra Joshi , Parvinder Kumar Rana , Abhishek Kesarwani
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: IN201941042891 20191022
- Main IPC: G11C7/08
- IPC: G11C7/08 ; G11C11/419

Abstract:
Embodiments herein provide a Static Random-Access Memory (SRAM) system with a delay tuning circuitry and a delay control circuitry and a method thereof. Delay tuning circuitry in the SRAM system may provide a tuning of reset time in the generation of an internal clock by introducing a delay. The delay is introduced according to a process state of periphery circuitry in the SRAM. A delay control circuitry provides a control over delay in reset time of the internal clock by varying a discharge rate for each of a Dummy Bit Line (DBL) circuitry and Complementary Bit Line Circuitry (CDBL), by connecting a stack of NMOS transistors over discharge NMOS transistors.
Public/Granted literature
- US20210118494A1 STATIC RANDOM-ACCESS MEMORY (SRAM) SYSTEM WITH DELAY TUNING AND CONTROL AND A METHOD THEREOF Public/Granted day:2021-04-22
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