- 专利标题： Semiconductor device with selectively etched surface passivation
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申请号： US16237362申请日： 2018-12-31
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公开(公告)号： US10957790B2公开(公告)日： 2021-03-23
- 发明人: Bruce McRae Green , Darrell Glenn Hill , Karen Elizabeth Moore , Jenn-Hwa Huang , Yuanzheng Yue , James Allen Teplik , Lawrence Scott Klingbeil
- 申请人： NXP USA, Inc.
- 申请人地址： US TX Austin
- 专利权人： NXP USA, Inc.
- 当前专利权人： NXP USA, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Bruce M. Green
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/311 ; H01L21/285 ; H01L29/20 ; H01L29/205 ; H01L29/06 ; H01L29/66 ; H01L29/40 ; H01L29/10 ; H01L23/31 ; H01L29/812 ; H01L29/51
摘要：
A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with a contact region formed within the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer.
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