Invention Grant
- Patent Title: Redistribution layers in semiconductor packages and methods of forming same
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Application No.: US16661636Application Date: 2019-10-23
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Publication No.: US10950577B2Publication Date: 2021-03-16
- Inventor: Cheng-Hsien Hsieh , Li-Han Hsu , Wei-Cheng Wu , Hsien-Wei Chen , Der-Chyang Yeh , Chi-Hsi Wu , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L25/065 ; H01L23/538 ; H01L25/00 ; H01L25/10 ; H01L23/00 ; H01L21/56 ; H01L23/31 ; H01L23/498

Abstract:
An embodiment package includes a first integrated circuit die, an encapsulent around the first integrated circuit die, and a conductive line electrically connecting a first conductive via to a second conductive via. The conductive line includes a first segment over the first integrated circuit die and having a first lengthwise dimension extending in a first direction and a second segment having a second lengthwise dimension extending in a second direction different than the first direction. The second segment extends over a boundary between the first integrated circuit die and the encapsulant.
Public/Granted literature
- US20200058616A1 Redistribution Layers in Semiconductor Packages and Methods of Forming Same Public/Granted day:2020-02-20
Information query
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