- Patent Title: Magnetic tunnel junction (MTJ) device and forming method thereof
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Application No.: US16261584Application Date: 2019-01-30
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Publication No.: US10943948B2Publication Date: 2021-03-09
- Inventor: Wei Chen , Hui-Lin Wang , Yu-Ru Yang , Chin-Fu Lin , Yi-Syun Chou , Chun-Yao Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910030827.X 20190114
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L23/552 ; H01L43/10 ; H01F41/34 ; H01L43/02 ; G11C11/16 ; H01F10/32 ; H01L43/12
Abstract:
A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
Public/Granted literature
- US20200227471A1 MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND FORMING METHOD THEREOF Public/Granted day:2020-07-16
Information query
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