- 专利标题: Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
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申请号: US16751318申请日: 2020-01-24
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公开(公告)号: US10937480B2公开(公告)日: 2021-03-02
- 发明人: Yohei Shiokawa , Tomoyuki Sasaki
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JPJP2017-084537 20170421
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C11/16 ; G01R33/09 ; H01L43/12 ; H01L43/10 ; H01L43/08 ; H01L43/02
摘要:
A spin current magnetization rotational element including a first ferromagnetic metal layer in which a magnetization direction is variable, and a spin-orbit torque wiring that extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, and is joined to the first ferromagnetic metal layer. The first ferromagnetic metal layer has a lamination structure including a plurality of ferromagnetic constituent layers and a plurality of nonmagnetic constituent layers which are respectively interposed between the ferromagnetic constituent layers adjacent to each other. At least one ferromagnetic constituent layer among the plurality of ferromagnetic constituent layers has a film thickness different from a film thickness of the other ferromagnetic constituent layers, and/or at least one nonmagnetic constituent layer among the plurality of nonmagnetic constituent layers has a film thickness different from a film thickness of the other nonmagnetic constituent layers.
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